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Transistors
2SA2046
Silicon PNP epitaxial planer type
Unit: mm
0.40+0.10 -0.05 3
0.650.15
For DC-DC converter
1.45
0.16+0.10 -0.06
* Low collector to emitter saturation voltage VCE(sat) * Mini3-G1 type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
1.50+0.25 -0.05
+0.20 2.80-0.30
I Features
1 0.95
2 0.95
1.900.20
I Absolute Maximum Ratings Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
2.90+0.20 -0.05
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Rating -30 -20 -5 -5 -1.5 400 150 -55 to +150 mm3
Unit V V V A A mW C C
10
0 0.1 1.10+0.20 -0.10
0.650.15
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Type Package
Marking Symbol: 3Z
Note) *: Measure on the ceramic substrate at 15 x 15 x 0.6
I Electrical Characteristics Ta = 25C 3C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio * Collector to emitter saturation voltage * Collector output capacitance Transition frequency Note) *: Pulse measurement Symbol VCBO VCEO VEBO hFE VCE(sat) Cob fT Conditions IC = -10 A, IE = 0 IC = -1 mA, IB = 0 IE = -10 A, , IC = 0 VCE = -2 V, IC = -100 mA IC = -500 mA, IB = -25 mA VCB = -10 V, IE = 0, f = 1 MHz VCB = -10 V, IE = 20 mA f = 200 MHz Min -30 -20 -5 160 -50 25 170 560 -150 35 mV pF MHz Typ Max Unit V V V
1.10+0.30 -0.10
5
0.400.20
1

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